Journal
CRYSTAL GROWTH & DESIGN
Volume 8, Issue 11, Pages 3893-3896Publisher
AMER CHEMICAL SOC
DOI: 10.1021/cg8002756
Keywords
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Funding
- National Science Foundation of China [5037203 1]
- NSFC [50540420104]
- Specialized Research Foundation for the Doctoral program of Higher Education [20050003004]
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In this paper, we report a new technique to manipulate and control the morphology of vapor-liquid-solid (VLS) grown SiC nanowires by varying the pressure of the source species. We demonstrate that the diameter of the nanowires is strongly related to the pressure and pressure variation rate of the source species. SiC nanowires with Eiffel-tower shape, spindle shape, and modulated diameters and periods have been synthesized. In principle, the technique is applicable to other material systems.
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