Journal
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume 15, Issue 11, Pages 9098-9103Publisher
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2015.11557
Keywords
Graphene; Atmospheric Pressure; Liquid Benzene; Vapor Pressure
Categories
Funding
- Sookmyung Women's University Research Grants
Ask authors/readers for more resources
Graphene has attracted great attention owing to its unique structural and electrical properties. Among various synthetic approaches of the graphene, metal assisted chemical vapor deposition (CVD) is the most reasonable and proper method to produce large-scale and low-defect graphene films. Until now, CVD from gaseous hydrocarbon sources has shown great promises for large-scale graphene growth, but high growth temperature is required for such growth. A recent work by using liquid benzene precursor has shown that monolayer graphene could be obtained at 300 degrees C by low pressure, required for high vacuum equipment. Here, we report the first successful attempt of atmospheric pressure CVD graphene growth on Cu foil using liquid benzene as a precursor. We investigated the effect of hydrogen partial pressure, growth time, and precursor temperature on the domain size of as-grown graphene. Also, micro-Raman analysis confirmed that these reaction parameters influenced the number of layer and uniformity of the graphene.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available