Journal
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume 15, Issue 3, Pages 2330-2332Publisher
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2015.10238
Keywords
CSZT; Thin Film; RF-Sputter; MLCC; Capacitance
Categories
Funding
- Fundamental R&D Program for Core Technology of Materials - Ministry of Trade, Industry and Energy (MOTIE) of Korea
- Kwangwoon University
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In this paper, (Ca0.7Sr0.3)(Zr0.8Ti0.2)O-3 thin films were fabricated by RF-sputtering at various deposition temperatures from 300 degrees C to 700 degrees C to determine the optimal deposition condition. The XRD data confirmed the successful fabrication of crystalline CSZT thin films. Based on the dielectric properties of the fabricated thin films, the optimal deposition temperature was 700 degrees C, which resulted in a film with a relatively high dielectric constant and low dielectric loss (28.4 and 0.006) (at 1 MHz). Moreover, the CSZT thin film deposited at 700 degrees C showed stable dielectric properties at microwave frequencies. With increasing deposition temperature, the roughness of the CSZT thin film increased but the leakage current of the CSZT thin film decreased, simultaneously.
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