Strain Loading Mode Dependent Bandgap Deformation Potential in ZnO Micro/Nanowires

The electronic-mechanical coupling in semiconductor nanostructures under different strain loading modes can modulate their photoelectric properties in different manners. Here, we report the systematic investigation on the strain mode dependent bandgap deformation potential of ZnO micro/nanowires under both uniaxial tensile and bending strains at room temperature. Uniaxial stretching-photoluminescence results show that the deformation potential of the smaller ZnO nanowire (with diameter d = 260 nm) is -30.6 meV/%, and is close to the bulk value, whereas it deviates the bulk value and becomes to be -10.6 meV/% when the wire diameter is increased to d = 2 mu m. This unconventional size dependence stems from surface effect induced inhomogeneous strain in the surface layer and the core of the ZnO micro/nanowires under uniaxial tension. For bending load mode, the in situ high-resolution transmission electron microscope analysis reveals that the local strain distributes linearly in the bending cross section. Further cathodoluminescence measurements on a bending ZnO microwire (d= 1.8 mu m) demonstrate that the deformation potential is 27 meV/%, whose absolute value is much larger than that of the ZnO microwire under uniaxial tension. Further analysis reveals that the distinct deformation potentials originate from the different deforming modes in ZnO micro/nanowires under bending or uniaxial tensile strains. Our results should facilitate the design of flexible optoelectronic nanodevices.