Journal
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS
Volume 14, Issue 3, Pages -Publisher
SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
DOI: 10.1117/1.JMM.14.3.031215
Keywords
nanocrystalline Si; ballistic hot electron; planar electron emitter; active-matrix drive; mask-less parallel exposure; direct write system; thin-film deposition; printing
Categories
Funding
- Formation of Innovation Centers for Fusion of Advanced Technologies programs set up with special coordination funds for promoting science and technology
- Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan
- Japan Society for the Promotion of Science (JSPS) through the Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program) of the Council for Science and Technology Policy (CSTP)
- Nanotechnology Platform of MEXT, Japan, at the Center for Integrated Nanotechnology Support, Tohoku University
- [2424053]
- Grants-in-Aid for Scientific Research [14J08599] Funding Source: KAKEN
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Making the best use of the characteristic features in nanocrystalline Si (nc-Si) ballistic hot electron source, an alternative lithographic technology is presented based on two approaches: physical excitation in vacuum and chemical reduction in solutions. The nc-Si cold cathode is composed of a thin metal film, an nc-Si layer, an n(+)-Si substrate, and an ohmic back contact. Under a biased condition, energetic electrons are uniformly and directionally emitted through the thin surface electrodes. In vacuum, this emitter is available for active-matrix drive massive parallel lithography. Arrayed 100 x 100 emitters (each emitting area: 10 x 10 mu m(2)) are fabricated on a silicon substrate by a conventional planar process, and then every emitter is bonded with the integrated driver using through-silicon-via interconnect technology. Another application is the use of this emitter as an active electrode supplying highly reducing electrons into solutions. A very small amount of metal-salt solutions is dripped onto the nc-Si emitter surface, and the emitter is driven without using any counter electrodes. After the emitter operation, thin metal and elemental semiconductors (Si and Ge) films are uniformly deposited on the emitting surface. Spectroscopic surface and compositional analyses indicate that there are no significant contaminations in deposited thin films. (C) 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
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