Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 27, Issue 4, Pages 3298-3304Publisher
SPRINGER
DOI: 10.1007/s10854-015-4158-x
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Funding
- National Natural Science Foundation of China [21176051]
- Guangxi Natural Science Foundation [2013GXNSFBA019234]
- Guangxi Key Laboratory of Information Material [1210908-204-Z, 131024-Z]
- Guangxi Experiment Center of Information Science [YB1511]
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High density indium tin oxide (ITO) ceramic targets with low SnO2 content were prepared successfully by sintering co-precipitationally synthesized powders. The sintering behavior, properties and refining grains of the ITO targets were studied in normal pressure oxygen ambience. Higher sintering temperature promoted sintering densification, resulted in abnormal grain growth and decreased bending strength. By a two-step sintering method, the uniform and fine-grained microstructures were obtained. The sintered density of the ITO targets was further improved. Furthermore, the grain size was reduced, and the bending strength was also enhanced.
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