Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 27, Issue 3, Pages 2321-2327Publisher
SPRINGER
DOI: 10.1007/s10854-015-4028-6
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Funding
- National Natural Science Foundation of China [61404086]
- Basical Research Program of Shenzhen [JCYJ20150324140036866]
- special fund of the central finance for the development of local Universities [000022070150]
- innovation development fund project of graduate student [0003600206]
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In this work, a high quality CH3NH3PbI3 thin film prepared by modified dual-source vapor evaporation was proposed. An ultra-thin PbI2 layer was deposited firstly, and then CH3NH3I and PbI2 were evaporated simultaneously to form CH3NH3PbI3 thin film. The results show that flat, uniform, smooth, less porous and good crystallinity perovskite thin films without impure phase are formed by the modified dual-source vapor evaporation. The ratios of Pb/I accord with the nominal MAPbI(3) stoichiometry and the band gaps are about 1.60 eV close to the theoretical value of 1.55 eV. The properties of CH3NH3 PbI3 thin film fabricated by this method are suitable for perovskite solar cells applications.
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