Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 27, Issue 3, Pages 2255-2259Publisher
SPRINGER
DOI: 10.1007/s10854-015-4019-7
Keywords
-
Categories
Funding
- Basic Science Research Program through the National Research Foundation of Korea - Ministry of Science, ICT and Future Planning [2014R1A1A3049826, 2014R1A2A1A11051245]
- National Research Foundation of Korea [2014R1A1A3049826, 2014R1A2A1A11051245] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
Spin-coated CuxCo1-xFe2O4 (x = 0, 0.2, 0.4, 0.6, and 0.8) thin films were prepared on Pt/TiO2/SiO2/Si substrates. Pt/CuxCo1-xFe2O4/Pt structures were fabricated to investigate the effect of Cu doping concentration on the resistive switching behaviors. Structural and morphology characterizations revealed that Cu doping improved the crystallization of the thin films as compared to undoped CoFe2O4. Current-voltage characterization showed that all CuxCo1-xFe2O4 thin films showed unipolar resistance switching, but the distribution range of the set voltage, reset voltage, and resistances were much reduced by Cu doping. Clear improvement in the stability of these parameters started to appear with x = 0.4, and the optimized performance was observed in the Pt/Cu0.6Co0.4Fe2 O-4/Pt structure. The improved stability of the switching parameters was attributed to the enhancement of hopping process between the Fe ions and the Cu ions in the spinel lattice. Our results indicated that appropriate adjustment of the doping elements in oxides can be a feasible approach in achieving stable resistance switching memory devices.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available