Synthesis, characterization and photovoltaic studies of CuInS2 nanostructures

In this investigation, (1,8-diamino-3,6-dioxaoctan) copper(II) sulfate, ([Cu(DADO)]SO4), bis(propylenediamine) copper(II) sulfate, and ([Cu(pn)(2)]SO4) were applied as copper precursors to fabricate CuInS2 (CIS) nanostructures in presence of microwave irradiation. Besides the effect of copper precursor, the effect of microwave power and time of irradiation on morphology of CuInS2 nanostructures were investigated. The as-prepared products were analyzed by XRD, PL, FT-IR, EDS, and SEM. The results of XRD patterns were indicated that pure CuInS2 with tetragonal phase could be only obtained after annealing at 400 degrees C for 2 h in a mixture of 85 % Ar and 15 % H-2 gases. SEM images were shown that regular hierarchical nanostructures of CuInS2 were obtained with the aid of [Cu(pn)(2)]SO4 as copper precursor under 900 W irradiation power for 12 min. The photovoltaic behaviors of as-synthesized CuInS2 nanostructures were studied after deposition of CdS film on chemical bath. CuInS2 film was directly deposited on the surface of the CdS film through doctor blade method. The as-deposited CdS/CuInS2 films were applied in photovoltaic measurements.