Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 26, Issue 5, Pages 3282-3286Publisher
SPRINGER
DOI: 10.1007/s10854-015-2828-3
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Funding
- National Basic Research Program of China (973 Program) [2013CB632900]
- National Natural Science Foundation of China [51072155]
- Key Laboratory Scientific Research Plan Projects of Shanxi Provincial Education Department [13JS042]
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Influence of different poling techniques on piezoelectric properties of Pb(Mg1/3Nb2/3) O-3-0.32PbTiO(3) (PMN-0.32PT) crystals was investigated. Piezoelectric coefficients (d(33)) were obtained to be 1833 and 193 pC/N for [001] and [111]-poled crystals by conventional poling technique, applied with 12 kV/cm at 80 and 90 degrees C for 15 min. Higher piezoelectric coefficients (1950 and 340 pC/N for [001] and [111]-poled crystals) could be obtained by a high temperature poling technique, applied with lower poling electric field (2.6 and 2.2 kV/cm for [001] and [111]-oriented crystals). Enhancement in piezoelectric properties is attributed to the domain walls increased by high temperature poling technique.
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