Dielectric properties and energy-storage performances of (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 relaxor ferroelectric thin films

(1 - x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) [(1 - x)PMN-xPT] relaxor ferroelectric thin films with x = 0.1, 0.2 and 0.3 were deposited on LaNiO3(100)/Pt(111)/TiO2/SiO2/Si substrates by the radio-frequency magnetron sputtering technique. The dielectric properties and energy-storage performances of these films were investigated in detail. X-ray diffraction spectra indicated that the thin films crystallized into a pure perovskite phase after annealed at 700 A degrees C. Moreover, all the (1 - x)PMN-xPT thin films showed the uniform and crack-free microstructure. With PT content increasing, the dielectric constant and the maximum polarization of the films increased gradually. A maximum recoverable energy-storage density of 31 J/cm(3) was achieved in the thin films with x = 0.2 under 2000 kV/cm at room temperature. Thus, (1 - x)PMN-xPT thin films with proper chemical composition are a promising candidate for high energy-storage capacitor application.