Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 26, Issue 12, Pages 9753-9758Publisher
SPRINGER
DOI: 10.1007/s10854-015-3645-4
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Funding
- Nature Science Foundation of China [51177175, 61274039]
- International Sci. & Tech. Collaboration Program of China [2012DFG52260]
- International Sci. & Tech. Collaboration Program of Guangdong Province, China [2013B051000041]
- National High-tech R&D Program of China [2014AA032606]
- Science & Technology Plan of Guangdong Province [2013B010401013]
- Guangdong-Hong Kong Joint Innovation Project of Guangdong Province [2014B050505009]
- Science & Technology Plan of Guangzhou [201508010048]
- State Key Laboratory on Integrated Optoelectronics [IOSKL2014KF17]
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In this paper, the selective area growth (SAG) technique is used to regrow thin AlGaN/GaN heterostructure on access region for realizing trench gate normally-off AlGaN/GaN MOSFET. Heavy background doping is found in SAG AlGaN/GaN heterostructure, which is not expected for its degradation on device performance. The background doping originates from SiO2 residuals at SAG interface. Through reducing the deposition temperature of SiO2 mask, background doping can be efficiently suppressed. As a result, the 2 dimensional electron gas transport property of SAG AlGaN/GaN heterostructure improves greatly, which is as good as the as-grown AlGaN/GaN heterostructure. Moreover, the performance of normally-off SAG AlGaN/GaN MOSFET improves greatly by suppression the Si residual on GaN template.
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