Journal
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
Volume 54, Issue 18, Pages 5425-5428Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/anie.201501071
Keywords
memory devices; nanodots; quantum dots; transition metal dichalkogenides; two-dimensional materials
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Funding
- MOE under AcRF Tier 2 [ARC 26/13, MOE2013-T2-1-034]
- AcRF Tier 1 [RG 61/12, RGT18/13, RG5/13, M4080865.070.706022]
- Singapore Millennium Foundation in Singapore
- National Research Foundation
- Prime Minister's Office, Singapore
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Despite unique properties of layered transitionmetal dichalcogenide (TMD) nanosheets, there is still lack of a facile and general strategy for the preparation of TMD nanodots (NDs). Reported herein is the preparation of a series of TMD NDs, including TMD quantum dots (e. g. MoS2, WS2, ReS2, TaS2, MoSe2 and WSe2) and NbSe2 NDs, from their bulk crystals by using a combination of grinding and sonication techniques. These NDs could be easily separated from the N-methyl- 2-pyrrolidone when post-treated with n-hexane and then chloroform. All the TMD NDs with sizes of less than 10 nm show a narrow size distribution with high dispersity in solution. As a proof-of-concept application, memory devices using TMD NDs, for example, MoSe2, WS2, or NbSe2, mixed with polyvinylpyrrolidone as active layers, have been fabricated, which exhibit a nonvolatile write-once-read-many behavior. These high-quality TMD NDs should have various applications in optoelectronics, solar cells, catalysis, and biomedicine.
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