Journal
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
Volume 55, Issue 5, Pages 1666-1669Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/anie.201507568
Keywords
2D semiconductors; broadband photoresponse; density functional calculations; Group 15 monolayers; high mobility
Categories
Funding
- National 973 project from National Basic Research Program of China in China [2014CB931700]
- NSFC in China [51572128, 21403109]
- NSFC-RGC in China [5151101197]
- NSF of Jiangsu province in China [BK20140769]
- DoD in USA [W911NF-15-1-0650]
- NSF in USA [EPS-10024109]
- Office Of The Director
- EPSCoR [1010094] Funding Source: National Science Foundation
Ask authors/readers for more resources
Optoelectronic applications require materials both responsive to objective photons and able to transfer carriers, so new two-dimensional (2D) semiconductors with appropriate band gaps and high mobilities are highly desired. A broad range of band gaps and high mobilities of a 2D semiconductor family, composed of monolayer of Group 15 elements (phosphorene, arsenene, antimonene, bismuthene) is presented. The calculated binding energies and phonon band dispersions of 2D Group 15 allotropes exhibit thermodynamic stability. The energy band gaps of 2D semiconducting Group 15 monolayers cover a wide range from 0.36 to 2.62 eV, which are crucial for broadband photoresponse. Significantly, phosphorene, arsenene, and bismuthene possess carrier mobilities as high as several thousand cm(2) V-1 s(-1). Combining such broad band gaps and superior carrier mobilities, 2D Group 15 monolayers are promising candidates for nanoelectronics and optoelectronics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available