Journal
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
Volume 54, Issue 51, Pages 15473-15477Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/anie.201509285
Keywords
boron; chemical vapor deposition; direct band gaps; monolayers; thin films
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Funding
- NSF [61474063, 11302100]
- Jiangsu NSF [SBK2015022205]
- NUAA [NS2013095, NE2015102, NJ20140002, NZ2015101, 0413Y02, 0415G02]
- Priority Academic Program Development of Jiangsu Higher Education Institutions
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Two-dimensional boron materials have recently attracted extensive theoretical interest because of their exceptional structural complexity and remarkable physical and chemical properties. However, such 2D boron monolayers have still not been synthesized. In this report, the synthesis of atomically thin 2D gamma-boron films on copper foils is achieved by chemical vapor deposition using a mixture of pure boron and boron oxide powders as the boron source and hydrogen gas as the carrier gas. Strikingly, the optical band gap of the boron film was measured to be around 2.25 eV, which is close to the value (2.07 eV) determined by first-principles calculations, suggesting that the gamma-B-28 monolayer is a fascinating direct band gap semiconductor. Furthermore, a strong photoluminescence emission band was observed at approximately 626 nm, which is again due to the direct band gap. This study could pave the way for applications of two-dimensional boron materials in electronic and photonic devices.
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