4.7 Article

Simulations of Silicon-on-Insulator Channel-Waveguide Electrooptical 2 x 2 Switches and 1 x 1 Modulators Using a Ge2Sb2Te5 Self-Holding Layer

Journal

JOURNAL OF LIGHTWAVE TECHNOLOGY
Volume 33, Issue 9, Pages 1805-1813

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2015.2393293

Keywords

Electrooptic devices; modulators; optical switches; optical waveguide; phase change materials

Funding

  1. NSERC under the SiEPIC CREATE program
  2. Air Force Office of Scientific Research [FA9550-14-1-0196]
  3. U.K. EPSRC through the Project entitled MIGRATION
  4. UW, Seattle

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This paper reports theoretical designs and simulations of electrooptical 2 x 2 switches and 1 x 1 loss modulators based upon GST-embedded SOI channel waveguides. It is assumed that the amorphous and crystalline phases of GST can be triggered electrically by Joule heating current applied to a 10-nm GST film sandwiched between doped-Si waveguide strips. TEo and TMo mode effective indices are calculated over 1.3 to 2.1-mu m wavelength range. For 2 x 2 Mach-Zehnder and directional coupler switches, low insertion loss, low crosstalk, and short device lengths are predicted for 2.1 mu m, although a decreased performance is projected for 1.55 mu m. For 1.3-2.1 mu m, the 1 x 1 EO waveguide has application as a variable optical attenuator and as a digital modulator, albeit with <= 100-ns state-transition time. Because the active material has two stable phases, the device holds itself in either state, and voltage needs to be applied only during transition.

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