Journal
CHINESE SCIENCE BULLETIN
Volume 56, Issue 30, Pages 3178-3190Publisher
SCIENCE PRESS
DOI: 10.1007/s11434-011-4695-5
Keywords
organic memory; two-terminal memory devices; organic thin-film transistors; integration; multilevel effect
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Funding
- National Basic Research Program of China [2011CB808404, 2009CB939703]
- National Natural Science Foundation of China [60825403, 90607022, 61001043]
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As one of the most promising candidates for next generation storage media, organic memory devices have aroused worldwide research interest in both academia and industry. In recent years, organic memories have experienced rapid progress. We review the development of organic resistive switching memories in terms of structure, characteristics, materials used, and integration. Some basic concepts are discussed, as well as the obstacles hindering the development and possible commercialization of organic memory devices.
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