Journal
CHINESE SCIENCE BULLETIN
Volume 56, Issue 15, Pages 1535-1538Publisher
SCIENCE PRESS
DOI: 10.1007/s11434-011-4450-y
Keywords
transparent conductive films; transparent semiconductors; Hall measurement; optical bandgap; radio-frequency sputtering
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Funding
- National Natural Science Foundation of China [51003073/E0303]
- Tianjin Natural Science Foundation [08JC-YBJC11400]
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Ta-doped In2O3 transparent conductive oxide films were deposited on glass substrates using radio-frequency (RF) sputtering at 300A degrees C. The influence of post-annealing on the structural, morphologic, electrical and optical properties of the films was investigated using X-ray diffraction, field emission scanning electron microscopy, Hall measurements and optical transmission spectroscopy. The obtained films were polycrystalline with a cubic structure and were preferentially oriented in the (222) crystallographic direction. The lowest resistivity, 5.1x10(-4) Omega cm, was obtained in the film annealed at 500A degrees C, which is half of that of the un-annealed film (9.9x10(-4) Omega cm). The average optical transmittance of the films was over 90%. The optical bandgap was found to decrease with increasing annealing temperature.
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