4.5 Article

LiF Thickness dependence of Electron Injection Models for Alq3/LiF/Al Cathode Structure

Journal

CHINESE PHYSICS LETTERS
Volume 31, Issue 11, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/0256-307X/31/11/118501

Keywords

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Funding

  1. National Natural Science Foundation of China [61106094, 20972097]
  2. Natural Science Foundation of Guangdong Province [S2012020011003]
  3. Foundation for Distinguished Young Talents in Higher Education of Guangdong [LYM11111]
  4. Shenzhen Science Foundation [JC201005280458A, JCYJ20130329115524512, JCYJ20120613162231310]

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We present the experimental evidences showing that three different electron injection models play roles in Alq(3) based organic light-emitting diodes in sequence when the thickness of LiF interlayer is changed. It is found that the device with a 0.2 nm LiF layer displays the largest current with declined luminescence. However, the one with a 0.6 nm LiF layer displays the second largest current and the highest luminescence of all. Combining with the photoluminescent test results, three models, namely chemical reaction at ternary interface, dipole effect at binary interface and tunneling enhancement effect, are expected to play roles in sequence when the LiF thickness is increased from 0 nm to 4 nm.

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