Journal
CHINESE PHYSICS LETTERS
Volume 29, Issue 8, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0256-307X/29/8/087201
Keywords
-
Categories
Funding
- National Basic Research Program of China [2009CB930600, 2012CB933301, 2012CB723402]
- National Natural Science Foundation of China [21144004]
- Ministry of Education of China [20113223120003]
- NSF of Jiangsu Province [BK2011761, SBK201122680]
- NSF of the Education Committee of Jiangsu Province [11KJB510017]
- NJUPT [NY211022, NY210030]
Ask authors/readers for more resources
Al/ZnO/P++-Si diodes exhibit typical unipolar resistive switching behaviors. The electroforming-free characteristics are observed after annealing the ZnO thin film at 400 degrees C in air. The ON/OFF ratios of the resistance are in the range of 10(4)-10(5) at a very low operation voltage of 0.1 V, and the devices show good endurance characteristics of over 400 cycles with negligible reduction. Finally, the memory mechanisms of the diodes are proposed on the basis of the current-voltage and resistance-voltage results. These results indicate that Al/ZnO/P++-Si devices have potential applications in nonvolatile memory devices.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
