Journal
CHINESE PHYSICS LETTERS
Volume 29, Issue 5, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0256-307X/29/5/057301
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Funding
- National Natural Science Foundation of China [50872111, 50902113, 50902114]
- National Basic Research Program of China [2011CB610406]
- 111 Project of China [B08040]
- NPU Foundation for Fundamental Research
- State Key Laboratory of Solidification Processing (NWPU)
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The band alignment of a (0001)CdS/CdTe heterojunction is in situ studied by synchrotron radiation photoemission spectroscopy (SRPES). The heterojunction is formed through stepwise deposition of a CdTe film on a wurtzite (0001)CdS single crystalline substrate via molecular beam epitaxy. CdS shows an upward band bending of 0.55 eV, the valence band offset Delta E-V is calculated to be 0.65 eV and the conduction band offset Delta E-C is 0.31 eV. The interfacial band alignment is sketched to display type-I band alignment.
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