Journal
ACS NANO
Volume 9, Issue 8, Pages 8312-8320Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.5b02785
Keywords
2D nanosheet MoS2; NiOx; MESFET; Hall measurement; Schottky junction; van der Waals interface
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Funding
- NRF (NRL program) [2014R1A2A1A01004815]
- Nano-Materials Technology Development Program [2012M3A7B4034985]
- NRF of Korea [2011-0018306]
- KISTI supercomputing center [KSC-2013-C3-008]
- Brain Korea 21 plus Program
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Molybdenum disulfide (MoS2) nanosheet, one of two-dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors. With an apparent energy band gap, it certainly provides a high carrier mobility, superior subthreshold swing, and ON/OFF ratio in field-effect transistors (FETs). However, its potential in carrier mobility has still been depreciated since the field-effect mobilities have only been measured from metal-insulator-semiconductor (MIS) FETs, where the transport behavior of conducting carriers located at the insulator/MoS2 interface is unavoidably interfered by the interface traps and gate voltage. Moreover, thin MoS2 MISFETs have always shown large hysteresis with unpredictable negative threshold voltages. Here, we for the first time report MoS2-based metal semiconductor field-effect transistors (MESFETs) using NiOx Schottky electrode which makes van der Waals interface with MoS2. We thus expect that the maximum mobilities or carrier transport behavior of the Schottky devices may hardly be interfered by interface traps or an on-state gate field. Our MESFETs with a few and similar to 10 layer MoS2 demonstrate intrinsic-like high mobilities of 500-1200 cm(2)/(Vs) at a certain low threshold voltage between -1 and -2 V without much hysteresis. Moreover, they work as a high speed and highly sensitive phototransistor with 2 ms switching and similar to 5000 A/W, respectively, supporting their high intrinsic mobility results.
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