Journal
CHINESE PHYSICS LETTERS
Volume 28, Issue 12, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0256-307X/28/12/127202
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Funding
- National Science and Technology Major Project of China [2011ZX02707]
- National Natural Science Foundation of China [61136005, 110761006063]
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Wafer-scale graphene field-effect transistors are fabricated using benzocyclobutene and atomic layer deposition Al2O3 as the top-gate dielectric. The epitaxial-graphene layer is formed by graphitization of a 2-inch-diameter Si-face semi-insulating 6H-SiC substrate. The graphene on the silicon carbide substrate is heavily n-doped and current saturation is not found. For the intrinsic characteristic of this particular channel material, the devices cannot be switched off. The cut-off frequencies of these graphene field-effect transistors, which have a gate length of 1 mu m, are larger than 800 MHz. The largest one can reach 1.24 GHz. There are greater than 95% active devices that can be successfully applied. We thus succeed in fabricating wafer-scale gigahertz graphene field-effect transistors, which paves the way for high-performance graphene devices and circuits.
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