Journal
CHINESE PHYSICS LETTERS
Volume 27, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0256-307X/27/2/028401
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Funding
- National Basic Research Program of China [2007CB935400 and 2006CB302700]
- National High-Technology Development Program of China [2008AA031402]
- Science and Technology Council of Shanghai [0752nm013, 07QA14065, 07SA08, 08DZ2200700, 08JC1421700]
- National Nature Science Foundation of China [60776058]
- Chinese Academy of Sciences [083YQA1001]
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Phase change random access memory (PC-RAM) based on Si2Sb2Te5 with a Pt tapered heating electrode (Pt-THE), which is fabricated using a focus ion beam (FIB), is investigated. Compared with the tungsten electrode, the Pt-THE facilitates the temperature rise in phase change material, which causes the decrease of reset voltage from 3.6 to 2.7 V. The programming region of the cell with the Pt-THE is smaller than that of the cell with a cylindrical tungsten heating electrode. The improved performance of the PC-RAM with a Pt-THE is attributed to the higher resistivity and lower thermal conductivity of the Pt electrode, and the reduction of the programming region, which is also verified by thermal simulation.
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