☆ 4.5 Article

Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N2O Doping

CHINESE PHYSICS LETTERS (2008)

Get Full Text
Add to Collection

Journal

CHINESE PHYSICS LETTERS
Volume 25, Issue 12, Pages 4345-4347

Publisher

IOP Publishing
DOI: 10.1088/0256-307x/25/12/045

Keywords

-

Categories

Physics, Multidisciplinary

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.5
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available
Webinars Posters Questions Hubs Funding Journals Papers Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.