4.5 Article

Black phosphorus-based field effect transistor devices for Ag ions detection

Journal

CHINESE PHYSICS B
Volume 27, Issue 8, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/27/8/087308

Keywords

black phosphorus; semiconductor devices; chemical sensing; witnessed inspections

Funding

  1. National Natural Science Foundation of China [61605131, 61435010]
  2. Shenzhen Science and Technology Research Fund, China [JCYJ20150324141711624]

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Black phosphorus (BP), an attractive two-dimensional (2D) semiconductor, is widely used in the fields of optoelectronic devices, biomedicine, and chemical sensing. Silver ion (Ag+), a commonly used additive in food industry, can sterilize and keep food fresh. But excessive intake of Ag+ will harm human health. Therefore, high sensitive, fast and simple Ag+ detection method is significant. Here, a high-performance BP field effect transistor (FET) sensor is fabricated for Ag+ detection with high sensitivity, rapid detection speed, and wide detection concentration range. The detection limit for Ag+ is 10(-10) mol/L. Testing time for each sample by this method is 60 s. Besides, the mechanism of BP-FET sensor for Ag+ detection is investigated systematically. The simple BP-FET sensor may inspire some relevant research and potential applications, such as providing an effective method for the actual detection of Ag+, especially in witnessed inspections field of food.

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