Journal
CHINESE PHYSICS B
Volume 23, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/23/2/027702
Keywords
ferroelectrics; resistive switching; RRAM; pulsed laser deposition
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Funding
- National Natural Science Foundation of China [51072061, 51031004, 51272078]
- Program for Changjiang Scholars and Innovative Research Team in University
- Priority Academic Program Development of Jiangsu Higher Education Institutions, China
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In this work, the resistive switching behaviors of ferroelectrictric BaTiO3/La0.67Sr0.33MnO3 heterostructures deposited by pulsed laser deposition are investigated. The BaTiO3 films show both well-established P-E hysteresis loops, and asymmetric reversible diode-like resistive switching behaviors, involving no forming process. It is found that both the ON/OFF ratio and the stability of resistive switching are substantially dependent on operation voltage (V-max). At a V-max of 15 V, a large ON/OFF resistance ratio above 1000 is obtained at a V-max of 15 V, which is able to maintain stability up to 70-switching cycles. The above resistive switching behaviors can be understood by modulating interface Schottky barriers as demonstrated by I-V curve fitting.
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