Comparative study of the electrical properties of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes

In this paper, the electrical parameters of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes are obtained from the forward bias current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Experimental results show that the rectifying ratios of the MS and MIS diodes at +/- 5 V are found to be 1.25 x 10(3) and 1.27 x 10(4), respectively. The main electrical parameters of the MS and MIS diodes, such as the zero-bias barrier height (Phi(Bo)) and ideality factor (n), are calculated to be 0.51 eV (I-V), 0.53 eV (C-V), and 4.43, and 0.65 eV (I-V), 0.70 eV (C-V), and 3.44, respectively. In addition, the energy density distribution profile of the interface states (N-ss) is obtained from the forward bias I-V, and the series resistance (R-s) values for the two diodes are calculated from Cheung's method and Ohm's law.