Journal
CHINESE PHYSICS B
Volume 22, Issue 3, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/22/3/038501
Keywords
tunnel field-effect transistor; band-to-band tunneling; subthreshold swing; gated P-I-N diode
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Funding
- National Ministries and Commissions, China [51308040203, 6139801]
- Fundamental Research Funds for the Central Universities, China [72105499, 72104089]
- Natural Science Basic Research Plan in Shaanxi Province, China [2010JQ8008]
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The tunneling field-effect transistor (TFET) is a potential candidate for the post-CMOS era. In this paper, a threshold voltage model is developed for this new kind of device. First, two-dimensional (2D) models are used to describe the distributions of potential and electric field in the channel and two depletion regions. Then based on the physical definition of threshold voltage for the nanoscale TFET, the threshold voltage model is developed. The accuracy of the proposed model is verified by comparing the calculated results with the 2D device simulation data. It has been demonstrated that the effects of varying the device parameters can easily be investigated using the model presented in this paper. This threshold voltage model provides a valuable reference to TFET device design, simulation, and fabrication.
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