Journal
CHINESE PHYSICS B
Volume 20, Issue 3, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/20/3/037805
Keywords
N-polar GaN; yellow luminescence; KOH etching
Categories
Funding
- National Key Science & Technology Special Project [2008ZX01002-002]
- National Natural Science Foundation of China [60890191, 60736033]
- Chinese Advance Research Program of Science and Technology [51308040301, 51308030102, 51311050112, 51323030207]
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This paper reports that the yellow luminescence intensity of N-polar GaN Epi-layers is much lower than that of Ga-polar ones due to the inverse polarity, and reduces drastically in the N-polar unintentionally-doped GaN after etching in KOH solution. The ratio of yellow luminescence intensity to band-edge emission intensity decreases sharply with the etching time. The full width at half maximum of x-ray diffraction of (10-12) plane falls sharply after etching, and the surface morphology characterized by scanning electron microscope shows a rough surface that changes with the etching time. The mechanism for the generation of the yellow luminescence are explained in details.
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