Journal
CHINESE JOURNAL OF CHEMISTRY
Volume 31, Issue 11, Pages 1428-1438Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/cjoc.201300585
Keywords
naphthalene diimide; sulfur heterocycle; n-type organic semiconductor; organic transistor
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Funding
- National Natural Science Foundation of China [51173200, 21103023]
- Ministry of Science and Technology [2211CB932300]
- Chinese Academy of Sciences
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Four classes of core-expanded naphthalene diimides (1a, 1b, 2a, 2b, 3 and 4) that bear different electron-deficient sulfur heterocycles were designed and synthesized. The solution-processed thin films of 1a, 2a, 3 and 4 operated well in air as n-channel organic transistors with electron mobility ranging from approximate to 10(-6) to 0.14 cm(2)/Vs, depending on the different conjugated backbones. The thin film microstructure studies were also carried out to understand the variations of the electron mobility for thin films of 1a, 2a, 3 and 4.
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