Journal
CHEMPHYSCHEM
Volume 14, Issue 12, Pages 2750-2758Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/cphc.201300362
Keywords
crystal growth; hole mobility; liquid crystals; semiconductors; thiophenes
Funding
- Adaptable and Seamless Technology Transfer Program through Target-Driven Research and Development (A-STEP) from the Japan Science and Technology Agency (JST)
- Japan Security Scholarship Foundation
- Ogasawara Foundation
- Ministry of Education, Culture, Sports, Science and Technology (MEXT) [22108506, 24108729]
- Japan Society for the Promotion of Science (JSPS) [22350080]
- Iwatani Naoji Foundation
- NEDO
- Grants-in-Aid for Scientific Research [22350080, 24108729, 22108506] Funding Source: KAKEN
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A liquid-crystalline (LC) phenylterthiophene derivative, which exhibited an ordered smectic phase at room temperature, was purified by vacuum sublimation under a flow of nitrogen. During the sublimation process, thin plates with sizes of 1 mm grew on the surface of the vacuum tube. The crystals exhibited the same X-ray diffraction patterns as the ordered smectic phase of the LC state that was formed through a conventional recrystallization process by using organic solvents. Because of the removal of chemical impurities, the hole mobility in the ordered smectic phase of the vacuum-grown thin plates increased to 1.2x10(-1) cm(2)V(-1)s(-1) at room temperature, whereas that of the LC precipitates was 7x10(-2) cm(2)V(-1)s(-1). The hole mobility in the ordered smectic phase of the vacuum-sublimated sample was temperature-independent between 400 and 220 K. The electric-field dependence of the hole mobility was also very small within this temperature range. The temperature dependence of hole mobility was well-described by the Hoesterey-Letson model. The hole-transport characteristics indicate that band-like conduction affected by the localized states, rather than a charge-carrier-hopping mechanism, is a valid mechanism for hole transport in an ordered smectic phase.
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