Journal
CHEMISTRY-AN ASIAN JOURNAL
Volume 9, Issue 3, Pages 779-783Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/asia.201301547
Keywords
heteroacenes; nitrogen heterocycles; non-volatile memory device; organic electronics
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Funding
- AcRF from MOE [RG 16/12]
- MOE [ARC 20/12, arc 2/13]
- NRF, Singapore
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N-substituted heteroacenes have been widely used as electroactive layers in organic electronic devices, and only a few of them have been investigated in organic resistive memory devices. Here, a novel N-substituted heteroacene 2-(4-(diphenylamino)phenyl)-4,11-bis((triisopropylsilyl)ethynyl)-1H-imidazo[4,5-b]phenazine (DBIP) has been designed, synthesized, and characterized. Sandwich-structure memory devices based on DBIP have been fabricated and the devices show non-volatile and stable memory character with good endurance performance.
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