Journal
CHEMISTRY-A EUROPEAN JOURNAL
Volume 19, Issue 40, Pages 13387-13395Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/chem.201301137
Keywords
crack-free; low temperature; plasma chemistry; porous thin films; sensors
Categories
Funding
- National Basic Research Program of China [2012CB932303]
- Recruitment Program of Global Experts (C)
- Natural Science Foundation of China [10974203, 51002158]
- Anhui Provincial Natural Science Foundation [11040606M62]
- Anhui Provincial Natural Science Foundation for Distinguished Young Scholar [1108085J20]
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Homogenous thin films are preferable for high-performance gas sensors because of their remarkable reproducibility and long-term stability. In this work, a low-temperature fabrication route is presented to prepare crack-free and homogenous metal oxide periodic porous thin films by oxygen plasma irradiation instead of high temperature annealing by using a sacrificial colloidal template. Rutile SnO2 is taken as an example to demonstrate the validity of this route. The crack-free and homogenous porous thin films are successfully synthesized on the substrates in situ with electrodes. The SnO2 porous thin film obtained by plasma irradiation is rich in surface OH groups and hence superhydrophilic. It exhibits a more homogenous structure and lower resistance than porous films generated by annealing. More importantly, such thin films display higher sensitivity, a lower detection threshold (100ppb to acetone) and better durability than those that have been directly annealed, resulting in enhanced gas-sensing performance. The presented method could be applied to synthesize other metal oxide homogenous thin films and to fabricate gas-sensing devices with high performances.
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