Journal
CHEMISTRY-A EUROPEAN JOURNAL
Volume 18, Issue 16, Pages 4923-4929Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/chem.201103967
Keywords
field effect transistors; graphene; photocatalysts; semiconductors; titanium dioxide; zinc oxide
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Funding
- Creative Research Initiatives of MEST/NRF
- MEST/NRF [R31-2008-10029]
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Graphene is of considerable interest as a next-generation semiconductor material to serve as a possible substitute for silicon. For real device applications with complete circuits, effective n-type graphene field effect transistors (FETs) capable of operating even under atmospheric conditions are necessary. In this study, we investigated n-type reduced graphene oxide (rGO) FETs of photoactive metal oxides, such as TiO2 and ZnO. These metal oxide doped FETs showed slight n-type electric properties without irradiation. Under UV light these photoactive materials readily generated electrons and holes, and the generated electrons easily transferred to graphene channels. As a result, the graphene FET showed strong n-type electric behavior and its drain current was increased. These n-doping effects showed saturation curves and slowly returned back to their original state in darkness. Finally, the n-type rGO FET was also highly stable in air due to the use of highly resistant metal oxides and robust graphene as a channel.
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