Journal
CHEMISTRY-A EUROPEAN JOURNAL
Volume 18, Issue 26, Pages 8216-8223Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/chem.201103905
Keywords
indium oxide; mesoporous materials; photochemistry; reduction; semiconductors
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A model is proposed for the drop in electronic resistance of n-type semiconducting indium oxide (In2O3) upon illumination with light (350 nm, 3.5 eV) as well as for the (light-enhanced) sensitivity of In2O3 to oxidizing gases. Essential features of the model are photoreduction and a rate-limiting oxygen-diffusion step. Ordered, mesoporous In2O3 with a high specific surface area serves as a versatile system for experimental studies. Analytical techniques comprise conductivity measurements under a controlled atmosphere (synthetic air, pure N2) and temperature-resolved in-situ Fourier transform infrared (FTIR) spectroscopy. IR measurements reveal that oxygen vacancies form a donor level 0.18 eV below the conduction band.
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