4.6 Article

Textured Fluorine-Doped Tin Dioxide Films formed by Chemical Vapour Deposition

Journal

CHEMISTRY-A EUROPEAN JOURNAL
Volume 17, Issue 41, Pages 11613-11621

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/chem.201100399

Keywords

chemical vapor deposition; doping; fluorine; thin films; tin

Funding

  1. EPSRC

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The use of an aerosol delivery system enabled fluorine-doped tin dioxide films to be formed from monobutyltin trichloride methanolic solutions at 350-550 degrees C with enhanced functional properties compared with commercial standards. It was noted that small aerosol droplets (0.3 mu m) gave films with better figures of merit than larger aerosol droplets (45 mu m) or use of a similar precursor set using atmospheric pressure chemical vapour deposition (CVD) conditions. Control over the surface texturing and physical properties of the thin films were investigated by variation in the deposition temperature and dopant concentration. Optimum deposition conditions for low-emissivity coatings were found to be at a substrate temperature of about 450 degrees C with a dopant concentration of 1.6 atm% (30 mol% F:Sn in solution), which resulted in films with a low visible light haze value (1.74%), a high charge-carrier mobility (25 cm(2)Vs(-1)) and a high charge-carrier density (5.7x10(20) cm(-3)) resulting in a high transmittance across the visible (approximate to 80%), a high reflectance in the IR (80% at 2500 nm) and plasma-edge onset at 1400 nm. Optimum deposition conditions for coatings with applications as top electrodes in thin film photovoltaics were found to be a substrate temperature of about 500 degrees C with a dopant concentration of 2.2 atm% (30 mol% F: Sn in solution), which resulted in films with a low sheet resistance (3 Omega sq(-1)), high charge-carrier density (6.4x10(20) cm(-3)), a plasma edge onset of 1440 nm and the films also showed pyramidal surface texturing on the micrometer scale which corresponded to a high visible light haze value (8%) for light scattering and trapping within thin film photovoltaic devices.

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