Journal
CHEMISTRY OF MATERIALS
Volume 26, Issue 18, Pages 5401-5411Publisher
AMER CHEMICAL SOC
DOI: 10.1021/cm502689x
Keywords
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Funding
- MRSEC program of the National Science Foundation at Northwestern University [DMR-1121262]
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-FG02-06ER46320]
- E.I. DuPont de Nemours Co.
- Dow Chemical Company
- Northwestern University
- U.S. DOE [DE-AC02-06CH11357]
- NSF [TG-DMR080007]
- NSF PREM [DMR 0934218]
- National Science Foundation [DMR-1121262]
- National Center for Research Resources [5 G12RR013646-12]
- Department of Defense [64756-RT-REP]
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A series of In2O3 thin films, ranging from X-ray diffraction amorphous to highly crystalline, were grown on amorphous silica substrates using pulsed laser deposition by varying the film growth temperature. The amorphous-tocrystalline transition and the structure of amorphous In2O3 were investigated by grazing angle X-ray diffraction (GIXRD), Hall transport measurement, high resolution transmission electron microscopy (HRTEM), electron diffraction, extended X-ray absorption fine structure (EXAFS), and ab initio molecular dynamics (MD) liquid-quench simulation. On the basis of excellent agreement between the EXAFS and MD results, a model of the amorphous oxide structure as a network of InOx polyhedra was constructed. Mechanisms for the transport properties observed in the crystalline, amorphous-to-crystalline, and amorphous deposition regions are presented, highlighting a unique structure-property relationship.
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