Journal
CHEMISTRY OF MATERIALS
Volume 26, Issue 19, Pages 5782-5788Publisher
AMER CHEMICAL SOC
DOI: 10.1021/cm502952u
Keywords
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Funding
- National Natural Science Foundation of China [21190031, 51273212, 51303201]
- Strategic Priority Research Program of the Chinese Academy of Science [XDB12010100]
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Dicyanomethylene-substituted quinoidal dithieno [2,3-d;2',3'-dlbenzo [1,2-b;4,5-b1 dithiophene compounds (QDTBDTs) with alkyl chains branched at different positions were synthesized. Thin-film transistor characteristics showed that the type of charge carriers in QDTBDTs could be tuned by changing the branching position of the alkyl chains. QDTBDT-2C exhibited n-channel behavior, and the observed electron mobility was 0.57 cm(2) V-1 s(-1) without post-treatment, one of the highest values reported for spin-coated thin-film transistors with no annealing under ambient conditions. QDTBDT-4C-based transistors displayed electron-dominated ambipolar transport behavior, with electron mobilities reaching 0.2 cm(2) V-1 s-i and hole mobilities in the range of 10-3-10-4 cm(2) V-1 s(-1). QDTBDT-3C showed solution-concentrationdependent carrier transport characteristics, exhibiting n-type behavior at low solution concentrations and ambipolar performance at high solution concentrations with an electron mobility of 0.22 cm(2) V-1 s(-1) and a hole mobility of 0.034 cm(2) V-1 s(-1). CMOSlike inverters fabricated from QDTBDT-2C displayed high gain and high noise margins.
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