Journal
CHEMISTRY OF MATERIALS
Volume 26, Issue 13, Pages 3957-3965Publisher
AMER CHEMICAL SOC
DOI: 10.1021/cm501568d
Keywords
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Funding
- National Research Foundation of Korea (NRF) - Korea government (MSIP) [2012R1A3A2026417]
- Brain Korea 21 Plus Project
- National Research Council of Science & Technology (NST), Republic of Korea [KK-1402-C0, KK-1402] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2012R1A3A2026417] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We demonstrate organic residue free, bandgap-graded Cu2Zn(Sn1-xGex)S-4 (CZTGeS) thin-film solar cells based on metal chalcogenide complex (MCC) ligand capped nanocrystals (NCs). The bandgap of the CZTGeS films is tuned by varying the amount of Sn2S64- MCC ligand absorbed on the surface of the Cu2ZnGeS4 (CZGeS) NCs, without an undesirable postselenization process. Using CZGeS NCs inks with three different Sn/(Ge+Sn) ratios, bandgap-graded CZTGeS thin films are obtained via multicoating and annealing procedures. Compositional and spectroscopic analyses along the film thickness confirm that the bandgraded CZTGeS absorber layer, with a gradually increasing bandgap from the back contact to the p-n junction, is successfully accomplished. Compared with an ungraded band structured CZTGeS cell, this normal grading structure facilitates both higher short circuit current and open-circuit voltage, facilitating a power conversion efficiency of 6.3%.
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