Journal
CHEMISTRY OF MATERIALS
Volume 26, Issue 22, Pages 6448-6453Publisher
AMER CHEMICAL SOC
DOI: 10.1021/cm502940v
Keywords
-
Funding
- Korea Institute of Science and Technology (KIST) [2E24881]
- Technology Innovation Program - Ministry of Trade, Industry & Energy (MI, Korea) [10046673, 10048261]
- KIST-UNIST partnership program [2V03290]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10046673] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
The initial growth behavior of ZnO films by atomic layer deposition (ALD) on layer-structured Bi2Te3 was investigated. Despite the lack of adsorption sites on the basal plane of Bi2Te3, negligible incubation in the ALD of ZnO on Bi2Te3 was found in the temperature range from 100 to 160 degrees C, and even the enhancement of the initial growth was observed at 200 degrees C. We demonstrate that a ZnTe interfacial layer was formed in the early growth stage by the interaction between diethylzinc and Bi2Te3, which improved the nucleation of ZnO on the basal plane of Bi2Te3. These results indicate that surface modification via the interaction between a precursor and layer-structured materials is an efficient way to achieve fluent and uniform nucleation on layer-structured materials such as Bi2Te3.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
