Solution Processing of GaAs Thin Films for Photovoltaic Applications

In this article we present a novel route to high quality GaAs thin films via a solution processing technique (aerosol assisted chemical vapor deposition) using a novel single source precursor [Me2GaAs(H)Bu-t](2). The thin films, grown on inexpensive glass substrates, were polycrystalline in nature with a Ga to As ratio of 1:1. The morphology studied via SEM showed the films to be smooth and consisting of compact domes. High-resolution transmission electron microscopy (HRTEM) revealed the films to have columnar growth and an average crystallite size of 90 nm. The films also contained low levels of contaminants as determined via energy dispersive X-ray spectroscopy (EDX) mapping, X-ray photoelectron spectroscopy (XPS) depth profiling, and secondary ion mass spectrometry (SIMS).