Journal
CHEMISTRY OF MATERIALS
Volume 25, Issue 9, Pages 1656-1663Publisher
AMER CHEMICAL SOC
DOI: 10.1021/cm400046w
Keywords
atomic layer deposition; ALD; lithium fluoride; LiF; thin films
Funding
- ASM Microchemistry Oy
- Finnish Centre of Excellence in Atomic Layer Deposition
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Lithium fluoride is an interesting material because of its low refractive index and large band gap. Previously LiF thin films have been deposited mostly by physical methods. In this study a new way of depositing thin films of LiF using atomic layer deposition (ALD) is presented. Mg(thd)(2), TiF4 and Lithd were used as precursors, and they produced crystalline LiF at a temperature range of 300-350 degrees C. The films were studied by UV-vis spectrometry, field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), atomic force microscopy (AFM), time-of-flight elastic recoil detection analysis (ToF-ERDA), and energy dispersive X-ray spectroscopy (EDX). In addition, film adhesion was tested by a Scotch tape test. This method results in LiF films with a growth rate of approximately 1.4 angstrom per cycle. According to the ToF-ERDA measurements, the films are pure LiF with very small Mg and Ti impurities, the largest impurity being hydrogen with contents below 1 atom %.
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