Journal
CHEMISTRY OF MATERIALS
Volume 25, Issue 3, Pages 266-276Publisher
AMER CHEMICAL SOC
DOI: 10.1021/cm301660n
Keywords
diorganotin dithiocarbamate; single source precursors; tin sulfide; thin films; aerosol-assisted chemical vapor deposition
Funding
- ORS
- University of Manchester
- EPSRC, UK
- European Commission (EC) [PIIF-GA-2007-220035-CaCoPhos]
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A series of diorganotin complexes of dithiocarbamates [Sn(C4H9)(2)(S2CN(RR')(2))(2)] (R, R' = ethyl (1); R = methyl, R' = butyl (2); R, R' = butyl (3); R = methyl, R' = hexyl (4); and [Sn(C6H5)(2)(S2CN(RR')(2))(2)] (R, R' = ethyl (5); R = methyl, R' = butyl (6); R, R' = butyl (7); R = methyl, R' = hexyl (8) were synthesized. Single-crystal X-ray structures of 2, 3, and 8 were determined. Thermogravimetric analysis (TGA) showed single-step decomposition for the complexes 1, 3, and 5-8, and double-step decomposition for the complexes 2 and 4 between 195 degrees C and 325 degrees C. Complexes 1-4 were used as single-source precursors for the deposition of SnS thin films by aerosol-assisted chemical vapor deposition (AACVD) at temperatures from 400 degrees C to 530 degrees C. Orthorhombic SnS thin films were deposited from all four complexes at all deposition temperatures. The films were characterized by UV-vis spectroscopy, powder X-ray diffraction (p-XRD), Raman spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), and also electrical resistivity measurements.
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