Highly Selective Chemical Vapor Deposition of Tin Diselenide Thin Films onto Patterned Substrates via Single Source Diselenoether Precursors

The distorted octahedral complexes [SnCl4{(BuSe)-Bu-n(CH2)(n)(SeBu)-Bu-n}] (n = 2 or 3), (1) and (2), obtained from reaction of SnCl4 with the neutral bidentate ligands and characterized by IR/Raman and multinuclear (H-1, Se-77{H-1} and Sn-119) NMR spectroscopy and X-ray crystallography, serve as very effective single source precursors for low pressure chemical vapor deposition (LPCVD) of microcrystalline, single phase tin diselenide films onto SiO2, Si and TiN substrates. Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) imaging show hexagonal plate crystallites which grow perpendicular to the substrate surface in the thicker films, but align mostly parallel to the surface when the quantity of reagent is reduced to limit the film thickness. X-ray diffraction (XRD) and Raman spectroscopy on the deposited films are consistent with hexagonal SnSe2 (P (3) over bar m1; a = b = 3.81 angstrom; c = 6.13 angstrom), with strong evidence for preferred orientation of the crystallites in thinner (0.5-2 mu m) samples, consistent with crystal plate growth parallel to the substrate surface. Hall measurements show the deposited SnSe2 is a n-type semiconductor. The resistivity of the crystalline films is 210 (+/- 10) m Omega cm and carrier density is 5.0 x 10(18) cm(-3). Very highly selective film growth from these reagents onto photolithographically patterned substrates is observed, with deposition strongly preferred onto the (conducting) TiN surfaces of SiO2/TiN patterned substrates, and onto the SiO2 surfaces of Si/SiO2 patterned substrates. A correlation between the high selectivity and high contact angle of a water droplet on the substrate surfaces is observed.