4.8 Article

Polyfluorene-Based Push-Pull Type Functional Materials for Write-Once-Read-Many-Times Memory Devices

Journal

CHEMISTRY OF MATERIALS
Volume 22, Issue 15, Pages 4455-4461

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/cm1012872

Keywords

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Funding

  1. National Natural Science Foundation of China [20876046]
  2. Ministry of Education of China [309013]
  3. Fundamental Research Funds for the Central Universities
  4. Shanghai Municipal Educational Commission [08GG10]
  5. Shanghai Eastern Scholarship

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A highly soluble polyfluorene-based copolymer containing electron-rich triphenylamine (TPA) and electron-poor 9,9-bis(3,4-bis(3,4-dicyanophenoxy)phenyl side chains in the C-9 position of the fluorene unit was synthesized under Yamamoto conditions. By applying 306 nm as excitation wavelength, the resultant polymer exhibits strong photoluminescence with maximum emission peaks centered at 413 and 433(sh) nm in chloroform. The calculated highest occupied molecular orbital (HOMO), lowest unoccupied molecular orbital (LUMO), energy bandgap, ionization potential, and electron affinity are -5.66, -3.44, 2.22, 5.92, and 3.70 eV, respectively. The as-fabricated polymer film exhibited typical stable write-once-read-many-times (WORM) memory characteristics, which are desirable for ultralow-cost permanent storage of digital images. The currents in both ON and OFF states did not show any degradation, suggesting good device stability. The ON/OFF current ratio observed in the sweep I-Vcharacteristics at +1.0 V is 6.1 x 10(3). The conduction mechanism through ITO/polymer/Al device is discussed.

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