Formation of SiO2 Air-Gap Patterns Through scCO2 Infusion of NIL Patterned PHEMA

Using templates generated by nanoimprint lithography, we report the fabrication of SiO2 patterns (similar to 450 nm) line widths over large active surface areas (14.5 cm(2)). The process involves the patterning of poly(2-hydroxyethyl methacrylate) (PHEMA) using polycarbonate molds followed by tetrachlorosilane (TCS) vapor cross-linking and supercritical carbon dioxide (scCO(2)) assisted tetraethylorthosilicate (TEOS) infusion. Uniform SiO2 lines were observed over an area 14.5 cm(2), which suggests that this process can be readily scaled.