Journal
CHEMISTRY OF MATERIALS
Volume 22, Issue 3, Pages 1010-1014Publisher
AMER CHEMICAL SOC
DOI: 10.1021/cm901950q
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Thin-film CuIn(Se,S)(2) (i.e., CIS) absorbers have been solution-deposited using a hydrazine-based approach that offers the potential to significantly lower the fabrication cost for CIS solar cells. In this method, metal chalcogenides are completely dissolved in hydrazine, forming a homogeneous precursor solution. Film deposition is demonstrated by spin-coating of the precursor solution onto various substrates, including Mo-coated glass and thermally oxidized silicon wafers. Using this approach, no postdeposition anneal in a toxic Se or S-containing environment is needed to obtain CIS Films. Instead, only a simple heat-treatment in an Inert atmosphere is required, resulting in CIS films with good crystallinity. Bandgap tuning call readily be achieved by varying the amount of S incorporated into the film. Complete CIS devices with glass/Mo/CIS/CdS/i-ZnO/ITO structure are fabricated using absorbers produced via this hydrazine-based approach. Air Mass 1.5G power conversion efficiencies of as high as 12.2% have been achieved, demonstrating that this new approach has great potential as a low-cost alternative for high-efficiency CIS solar cell production.
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