4.3 Article

n-Type Field-effect Transistors Based on Thieno[3,2-b]thiophene-2,5-dione and the Bis(dicyanomethylene) Derivatives

Journal

CHEMISTRY LETTERS
Volume 40, Issue 9, Pages 998-1000

Publisher

CHEMICAL SOC JAPAN
DOI: 10.1246/cl.2011.998

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Funding

  1. Ministry of Education, Culture, Sports, Science and Technology, Japan [19350092, 22550162]
  2. Education and Research Center for Emergence of New Molecular Chemistry
  3. JSPS [P09255]
  4. Grants-in-Aid for Scientific Research [09F09255, 22550162] Funding Source: KAKEN

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Two new compounds, 3,6-bis(4-trifluoromethylphenyl)thieno[3,2-b]thiophene-2,5-dione (1) and 2,5-bis(dicyanomethylene)3,6-bis(4-trifluoromethylphenyl)thieno[3,2-b]thiophene (2), were synthesized and characterized. The crystal structure of 1 was determined by single-crystal X-ray structure analysis. Organic field-effect transistors (OFETs) showed a relatively good mobility up to 0.039 cm(2) V-1 s(-1) in 1 and a better air stability in 2.

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