Journal
CHEMICAL VAPOR DEPOSITION
Volume 14, Issue 9-10, Pages 292-295Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/cvde.200806687
Keywords
Single-source precursors; Thin films; Tin sulfide; Tin thiosemicarbazones
Funding
- DST, India
- EPSRC (UK)
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Tin sulfide (SnS) thin films are deposited using simple tin thiosemicarbazone complexes of the type Bz(3)SnCl(L) (L = thiosemicarbazones of salicylaldehye and 4-chlorobenzaldehyde). Thin films are deposited using aerosol-assisted (AA) CVD in the range 375-475 degrees C. X-ray diffraction (XRD) shows the formation of SnS regardless of growth temperature and precursor type. Scanning electron microscope (SEM) images show that the films have wafer-like morphology, and the growth temperatures do not have a profound effect on morphology.
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